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JIS H 0604:1995 (R2014)
Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay methodMore info
This Japanese Industrial Standard specifies the measurement of minority-carrier bulk recombination lifetime (hereafter, referred to as bulk lifetime or b) in silicon single crystal by d.c. photoconductive decay method. The single crystal to be measured shall have a homogeneous composition, of which the rsistivity shall be at least 1 ohm.cm.
| Author | JSA |
|---|---|
| Editor | JSA |
| Document type | Standard |
| Format | File |
| Confirmation date | 2014-10-20 |
| ICS | 29.045 : Semiconducting materials 77.120.99 : Other non-ferrous metals and their alloys |
| Number of pages | 7 |
| Year | 1990 |
| Document history | |
| Country | Japan |
| Keyword | JIS 0604;0604;JIS H 0604-1995 |