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ASTM C863-00(2016)
Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated TemperaturesMore info
1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO2) and its attendant crystalline growth.
| Author | ASTM |
|---|---|
| Editor | ASTM |
| Document type | Standard |
| Format | File |
| Confirmation date | 2016-06-01 |
| ICS | 81.080 : Refractories |
| Number of pages | 2 |
| Replace | ASTM C863-00(2010) |
| Set | ASTMVOL1501 |
| Year | 2000 |
| Document history | ASTM C863-00(2010) |
| Country | USA |
| Keyword | ASTM 863;ASTM C863;ASTM C863;10.1520/C0863-00R16 |