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1.1 This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (matl.)/s.
1.1.1 Discussion—This document is intended to be a guide to determine upset threshold, and is not intended to be a stand-alone document.
| Author | ASTM |
|---|---|
| Editor | ASTM |
| Document type | Standard |
| Format | File |
| Number of pages | 6 |
| Replace | ASTM F1262M-95(2008) + Redline |
| Set | ASTMVOL1004 |
| Year | 2014 |
| Document history | ASTM F1262M-95(2008) + Redline |
| Country | USA |
| Keyword | ASTM 1262;ASTM F1262;ASTM F1262;10.1520/F1262M-14 |