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ASTM F980-16
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor DevicesMore info
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.
1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1)2, but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.
| Author | ASTM |
|---|---|
| Editor | ASTM |
| Document type | Standard |
| Format | File |
| ICS | 29.045 : Semiconducting materials |
| Number of pages | 7 |
| Replace | ASTM F980-10e1 |
| Set | ASTMVOL1004 |
| Year | 2016 |
| Document history | ASTM F980-10e1 |
| Country | USA |
| Keyword | ASTM 980;ASTM F980;ASTM F980;10.1520/F0980-16 |