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1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation to determine the permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not currently available for other semiconductor materials.
| Author | ASTM |
|---|---|
| Editor | ASTM |
| Document type | Standard |
| Format | File |
| ICS | 31.020 : Electronic components in general 31.080.01 : Semiconductor devices in general |
| Number of pages | 6 |
| Replace | ASTM F1190-11 |
| Set | ASTMVOL1004 |
| Year | 2018 |
| Document history | ASTM F1190-11 |
| Country | USA |
| Keyword | ASTM 1190;ASTM F1190;ASTM F1190;10.1520/F1190-18 |