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ISO 14706:2014
Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopyMore info
ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.
| Author | ISO/TC 201 Surface chemical analysis |
|---|---|
| Editor | ISO |
| Document type | Standard |
| Format | Paper |
| Edition | 2 |
| ICS | 71.040.40 : Chemical analysis |
| Number of pages | 25 |
| Replace | ISO 14706:2000 |
| Weight(kg.) | 0.1425 |
| Year | 2014 |
| Country | Switzerland |