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ISO 17560:2014
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in siliconMore info
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
| Author | ISO/TC 201/SC 6 Secondary ion mass spectrometry |
|---|---|
| Editor | ISO |
| Document type | Standard |
| Format | Paper |
| Edition | 2 |
| ICS | 71.040.40 : Chemical analysis |
| Number of pages | 10 |
| Replace | ISO 17560:2002 |
| Weight(kg.) | 0.1170 |
| Year | 2014 |
| Country | Switzerland |