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IEC 62047-16 (2015-03)
IEC 62047-16:2015 Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methodsMore info
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
| Author | IEC |
|---|---|
| Editor | CEI |
| Document type | Standard |
| Format | File |
| Edition | 1.0 |
| ICS | 31.080.99 : Other semiconductor devices |
| Number of pages | 21 |
| Replace | IEC 47F/209/FDIS (2014-12) |
| Cross references | DIN EN 62047-16 (2015-12), IDT |
| Year | 2015 |
| Document history | IEC 62047-16 (2015-03) |
| Country | Switzerland |
| Keyword | IEC62047;IEC 62047-16:2015 |