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IEC 62047-26 (2016-01)

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IEC 62047-26 (2016-01)

IEC 62047-26:2016 Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

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IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

Author IEC
Editor CEI
Document type Standard
Format File
Edition 1.0
ICS 31.080.99 : Other semiconductor devices
Number of pages 57
Replace IEC 47F/233/FDIS (2015-10)
Cross references DIN EN 62047-26 (2016-12), IDT
Year 2016
Document history IEC 62047-26 (2016-01)
Country Switzerland
Keyword IEC62047;IEC 62047-26:2016