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IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
| Author | IEC |
|---|---|
| Editor | CEI |
| Document type | Standard |
| Format | File |
| Edition | 1.0 |
| ICS | 31.200 : Integrated circuits. Microelectronics |
| Number of pages | 28 |
| Year | 2018 |
| Country | Switzerland |
| Keyword | IEC63011;IEC 63011-3:2018 |