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IEC 63011-3 (2018-11)

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IEC 63011-3 (2018-11)

IEC 63011-3:2018 Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via

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IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.  

Author IEC
Editor CEI
Document type Standard
Format File
Edition 1.0
ICS 31.200 : Integrated circuits. Microelectronics
Number of pages 28
Year 2018
Country Switzerland
Keyword IEC63011;IEC 63011-3:2018