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IEC 63068-2 (2019-01)
IEC 63068-2:2019 Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspectionMore info
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
| Author | IEC |
|---|---|
| Editor | CEI |
| Document type | Standard |
| Format | File |
| Edition | 1.0 |
| ICS | 31.080.99 : Other semiconductor devices |
| Number of pages | 25 |
| Year | 2019 |
| Country | International |
| Keyword | IEC63068;IEC 63068-2:2019 |