Cart 0 Product Products (empty)
No products
To be determined Shipping
$0.00 Total
Product successfully added to your shopping cart
Quantity
Total
There are 0 items in your cart. There is 1 item in your cart.
Total products
Total shipping To be determined
Total
New Sale! 
View larger
View larger IEC 63068-1 (2019-01)
New product
IEC 63068-1 (2019-01)
IEC 63068-1:2019 Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defectsMore info
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
| Author | IEC |
|---|---|
| Editor | CEI |
| Document type | Standard |
| Format | File |
| Edition | 1.0 |
| ICS | 31.080.99 : Other semiconductor devices |
| Number of pages | 23 |
| Year | 2019 |
| Country | International |
| Keyword | IEC63068;IEC 63068-1:2019 |