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IEC 60749-17:2019 is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
This edition includes the following significant technical changes with respect to the previous edition:
* updates to better align the test method with MIL-STD 883J, method 1017, including removal of restriction of use of the document, and a requirement to limit the total ionization dose;
* addition of a Bibliography, including US MIL- and ASTM standards relevant to this test method.
Author | IEC |
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Editor | CEI |
Document type | Standard |
Format | File |
Edition | 2.0 |
ICS | 31.080.01 : Semiconductor devices in general |
Number of pages | 17 |
Replace | IEC 60749-17 (2003-02) |
Year | 2019 |
Document history | IEC 60749-17 (2003-02) |
Country | Switzerland |
Keyword | IEC60749;IEC 60749-17:2019 |