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Defines methods for verifying the diode recovery stress capability of power transistors.
| Author | EIA |
|---|---|
| Editor | EIA |
| Document type | Standard |
| Format | File |
| Confirmation date | 2002-10-01 |
| ICS | 31.080.10 : Diodes 31.080.30 : Transistors |
| Number of pages | 12 |
| Modify | EIA JESD 24 (1985) |
| Year | 1990 |
| Document history | |
| Country | USA |
| Keyword | EIA JESD 24;EIA 24;EIA 24.7;24;EIA JESD24-7 |