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This addendum provides data analysis examples useful in analyzing MOSFET n-channel hot-carrier-induced degradation data. This addendum to JESD28 (Hot carrier n-channel testing standard) suggests hot-carrier data analysis techniques.
| Author | EIA |
|---|---|
| Editor | EIA |
| Document type | Standard |
| Format | File |
| ICS | 17.220.20 : Measurement of electrical and magnetic quantities |
| Number of pages | 15 |
| Year | 2001 |
| Document history | |
| Country | USA |
| Keyword | EIA JESD 28;EIA 28;EIA 28.1;28;EIA JESD28-1 |