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EIA JESD 28-A:2001
Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation under DC StressMore info
This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process.
| Author | EIA |
|---|---|
| Editor | EIA |
| Document type | Standard |
| Format | File |
| ICS | 17.220.20 : Measurement of electrical and magnetic quantities |
| Number of pages | 20 |
| Replace | EIA JESD 28-A (2001-09) |
| Year | 2001 |
| Document history | EIA JESD 28-A (2001-12) |
| Country | USA |
| Keyword | EIA JESD 28;EIA 28;28;EIA JESD28-A |