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Test method to measure the equivalent resistance of the gate to source of a power MOSFET.
| Author | EIA |
|---|---|
| Editor | EIA |
| Document type | Standard |
| Format | File |
| Confirmation date | 2002-10-01 |
| ICS | 31.080.01 : Semiconductor devices in general |
| Number of pages | 10 |
| Modify | EIA JESD 24 (1985) |
| Year | 1990 |
| Document history | |
| Country | USA |
| Keyword | EIA JESD 24;EIA 24;EIA 24.11;24;EIA JESD24-11 |